Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric
US7422020B2 · kind B2 · utility
0Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Jul 2, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2217/425
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.