N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

US7422777B2 · kind B2 · utility

Assignee

• EASTMAN KODAK COMPANY · US

Inventors

• Deepak Shukla · Oshkosh, US
• Diane C. Freeman · Pittsford, US
• Shelby F. Nelson · Pittsford, US
• Jeffrey T. Carey · Victor, US
• Wendy G. Ahearn · Rochester, US

Key dates

• Filing date: Nov 22, 2005
• Grant date: Sep 9, 2008
• Expiry date: Aug 22, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31721
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.