Self-aligned process for manufacturing phase change memory cells

US7422926B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Fabio Pellizzer · Boise, US
• Roberto Bez · Milano, IT
• Enrico Varesi · Milano, IT
• Agostino Pirovano · Milano, IT
• Pietro Petruzza · Arcore, IT

Key dates

• Filing date: Jun 2, 2006
• Grant date: Sep 9, 2008
• Expiry date: Jun 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase change storage region a heater structure is first formed and a phase change layer is deposited on and in contact with the heater structure. Then, the phase change layer and the heater structure are defined by subsequent self-aligned etch steps.