Inventor · Milano, IT

Roberto Bez

40Patents
12h-index
47Co-inventors
81Inventor score

Filing activity: Oct 30, 1996 → Aug 25, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7012832B1 Magnetic memory cell with plural read transistors Physics 157 Expired
US7110289B1 Method and system for controlling MRAM write current to reduce power consumption Physics 153 Expired
US6972430B2 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof Electricity 134 Expired
US7422926B2 Self-aligned process for manufacturing phase change memory cells Electricity 55 Active
US5990526A Memory device with a cell array in triple well, and related manufacturing process Electricity 49 Expired
US6891747B2 Phase change memory cell and manufacturing method thereof using minitrenches Electricity 35 Expired
US6734490B2 Nonvolatile memory cell with high programming efficiency Electricity 34 Expired
US6567296B1 Memory device Physics 29 Expired
US7259040B2 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby Electricity 27 Expired
US5784319A Method for erasing an electrically programmable and erasable non-volatile memory cell Physics 25 Expired
US8546231B2 Memory arrays and methods of forming memory cells Electricity 21 Active
US7227171B2 Small area contact region, high efficiency phase change memory cell and fabrication method thereof Emerging Cross-Sectional Technologies 20 Expired
US7227765B2 Content addressable memory cell Physics 10 Expired
US8553453B2 Phase change memory device Electricity 9 Active
US6222245A High capacity capacitor and corresponding manufacturing process Electricity 9 Expired
US7307451B2 Field programmable gate array device Electricity 8 Expired
US8975148B2 Memory arrays and methods of forming memory cells Electricity 7 Active
US7993957B2 Phase change memory cell and manufacturing method thereof using minitrenches Electricity 5 Active
US7446011B2 Array of cells including a selection bipolar transistor and fabrication method thereof Electricity 5 Active
US9064565B2 Phase change memory device Electricity 5 Active
US9779805B2 Phase change memory device Electricity 4 Active
US10482954B2 Phase change memory device Electricity 4 Active
US6537879B2 Process for manufacturing a non-volatile memory cell with a floating gate region autoaligned to the isolation and with a high coupling coefficient Electricity 4 Expired
US8384148B2 Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling Electricity 3 Active
US6294431A Process of manufacture of a non-volatile memory with electric continuity of the common source lines Electricity 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.