Semiconductor constructions comprising a layer of metal over a substrate
US7423345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2002 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Feb 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.