Semiconductor device
US7423349B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.