Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US7425471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Dec 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.