Patent · US Active

Method and apparatus for inspecting target defects on a wafer

US7426031B2 · kind B2 · utility

3Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 1, 2006
Grant dateSep 16, 2008
Priority date
Expiry dateMar 15, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/9501
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.