Corrosion-resistant barrier polishing solution
US7427362B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Jan 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 0.0005 to 5 weight percent of at least one nonferrous accelerator selected from the group of a complexing agent for complexing the nonferrous metal and a water-soluble polymer containing an acrylic acid functional group and having a number average molecular weight of 100 to 1,000,000, 0 to 50 weight percent abrasive and balance water at a pH less than 7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.