Recticle pattern applied to mix-and-match lithography process and alignment method of thereof
US7427459B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Apr 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7076
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A recticle pattern applied to a mix-and-match lithography process is described. The recticle has a transparent region and a non-transparent region. The transparent region includes a device region and a scribe line region. The recticle pattern includes a plurality of device patterns, a portion of a first and a second set of alignment measure figures, and a set of overlay measure figures. The first and the second sets of the alignment measure figures are disposed on the scribe line region and the non-transparent region. The first and the second sets of the alignment measure figures respectively self-align to produce two sets of composite alignment measure figures after the exposure process. A set of overlay measure figures includes four rectangular boxes respectively disposed in the four areas formed in the corners of where the non-transparent region and the scribe line region meet to correct the overlay error caused by recticle rotation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.