Wei-Su Chen
37Patents
7h-index
34Co-inventors
65Inventor score
Filing activity: Jan 24, 2002 → Jun 7, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6830981B2 | Vertical nanotube transistor and process for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7566895B2 | Phase change memory device and method for fabricating the same | Electricity | 11 | Active |
| US6734074B2 | Micro fabrication with vortex shaped spirally topographically tapered spirally patterned conductor layer and method for fabrication thereof | Electricity | 9 | Expired |
| US8212231B2 | Resistive memory device with an air gap | Electricity | 8 | Active |
| US8241990B2 | Air gap fabricating method | Electricity | 8 | Active |
| US7626191B2 | Lateral phase change memory with spacer electrodes | Electricity | 8 | Active |
| US7728320B2 | Semiconductor memory device and phase change memory device | Electricity | 7 | Active |
| US7989795B2 | Phase change memory device and method for fabricating the same | Electricity | 7 | Active |
| US8063393B2 | Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Active |
| US7687377B2 | Method of fabricating phase change memory device | Electricity | 6 | Active |
| US7732801B2 | Phase change memory device | Electricity | 6 | Active |
| US8198620B2 | Resistance switching memory | Electricity | 5 | Active |
| US9680089B1 | Magnetic tunnel junctions | Electricity | 4 | Active |
| US7427459B2 | Recticle pattern applied to mix-and-match lithography process and alignment method of thereof | Physics | 4 | Active |
| US6822257B2 | Organic light emitting diode device with organic hole transporting material and phosphorescent material | Electricity | 4 | Expired |
| US7835177B2 | Phase change memory cell and method of fabricating | Physics | 4 | Active |
| US9257641B2 | Via structure, memory array structure, three-dimensional resistance memory and method of forming the same | Electricity | 4 | Active |
| US7851253B2 | Phase change memory device and fabricating method | Electricity | 3 | Active |
| US8072018B2 | Semiconductor device and method for fabricating the same | Electricity | 3 | Active |
| US9379315B2 | Memory cells, methods of fabrication, semiconductor device structures, and memory systems | Electricity | 3 | Active |
| US7932509B2 | Phase change memory element | Electricity | 2 | Active |
| US9537088B1 | Magnetic tunnel junctions | Electricity | 2 | Active |
| US10276781B2 | Magnetoresistive structures, semiconductor devices, and related systems | Electricity | 1 | Active |
| US9478735B1 | Magnetic tunnel junctions | Electricity | 1 | Active |
| US7814566B2 | Tip array structure and fabricating method of tip structure | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.