Photoresists with reduced outgassing for extreme ultraviolet lithography
US7427463B2 · kind B2 · utility
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25References
30Claims
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Key dates
| Filing date | Oct 14, 2003 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Jan 16, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.