Phase change memory devices employing cell diodes and methods of fabricating the same
US7427531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Nov 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Phase change memory devices having cell diodes and related methods are provided, where the phase change memory devices include a semiconductor substrate of a first conductivity type and a plurality of parallel word lines disposed on the semiconductor substrate, the word lines have a second conductivity type different from the first conductivity type and have substantially flat top surfaces, a plurality of first semiconductor patterns are one-dimensionally arrayed on each word line along a length direction of the word line, the first semiconductor patterns have the first conductivity type or the second conductivity type, second semiconductor patterns having the first conductivity type are stacked on the first semiconductor patterns, an insulating layer is provided on the substrate having the second semiconductor patterns, the insulating layer fills gap regions between the word lines, gap regions between the first semiconductor patterns and gap regions between the second semiconductor patterns, a plurality of phase change material patterns are two-dimensionally arrayed on the insulating layer, and the phase change material patterns are electrically connected to the second semiconduct…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.