Manufacturing strained silicon substrates using a backing material
US7427554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Nov 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. A backing plate is coupled to the deformable surface region to cause the deformable surface region to be substantially non-deformable. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.