Thin-film transistor and methods
US7427776B2 · kind B2 · utility
41Cited by
17References
70Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2004 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Sep 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.