Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type
US7427779B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Apr 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7624
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si1-XfGeXf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon on insulator substrate and a first initial layer of silicon and germanium alloy of Si1-X1GeX1 type, with X1 strictly comprised between 0 and Xf. The stack also comprises a second initial layer of silicon and germanium alloy of Si1-X2GeX2 type, with X2 comprised between a first value that is not zero and 1, and an intermediate layer, preferably made of silicon oxide or silicon nitride, that is able to remain amorphous during formation of the substrate and that is intercalated between the first initial layer of Si1-X1GeX1 and the second initial layer of Si1-X2GeX2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.