Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods
US7429504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2005 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | Oct 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates, and methods of forming such substrates and integrated circuits. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.