Nanoimprint resist

US7431858B2 · kind B2 · utility

Assignee

• AZ Electronic Materials (Germany) GmbH · DE

Inventors

• Walter Spiess · Dieburg, DE
• Fumio Kita · Wiesbaden, DE
• Michael Meier · Liederbach, DE
• Andreas Gier · Melle, DE
• Martin Mennig · Idar-Oberstein, DE
• Peter W. Oliveira · Riegelsberg, DE
• Helmut Schmidt · Riegelsberg, DE

Key dates

• Filing date: Apr 9, 2003
• Grant date: Oct 7, 2008
• Expiry date: Mar 6, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/0047
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.