CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor
US7432554B2 · kind B2 · utility
3Cited by
7References
26Claims
0Family size
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Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.