Silicide formation on SiGe
US7432559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Jan 30, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.