Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same
US7432560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Aug 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a body pattern of a first conductivity type disposed on an insulating layer. A gate electrode is disposed on the body pattern. A drain region of a second conductivity type is disposed on the insulating layer and having a sidewall in contact with a first sidewall of the body pattern. An impurity-doped region of the first conductivity type is disposed on the insulating layer and having a sidewall in contact with a second sidewall of the body pattern. The MOSFET further includes a source region of the second conductivity type disposed on the impurity-doped region and having a sidewall in contact with the second sidewall of the body pattern, and a contact plug extending through the source region to contact the impurity-doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.