Semiconductor device and manufacturing method thereof
US7432570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Jan 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.