Scalable magnetic random access memory device
US7433225B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for writing data to an MRAM device having a plurality of magnetic memory cells configured in an array between a plurality of word lines and bit lines. At least one of the magnetic memory cells includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one spacer layer, and a third free magnetic layer separated from the second free magnetic layer by at least one anti-parallel coupling layer. A magnetic moment of the first free magnetic is greater than both a magnetic moment of the second free magnetic layer and a magnetic moment of the third free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.