Method of wafer laser processing using a gas permeable protective tape
US7435607B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Aug 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A laser processing method for forming a deteriorated layer, which has been once molten and then re-solidified, in the inside of a wafer by applying a pulse laser beam capable of passing through the wafer to the wafer along a dividing line formed on the wafer, comprising: a protective tape affixing step for affixing a protective tape having gas permeability to one side of the wafer; a wafer holding step for holding the wafer having the protective tape affixed thereto on the chuck table of a laser beam machine in such a manner that the surface side onto which the protective tape has been affixed comes into contact with the chuck table; and a laser beam application step for applying a pulse laser beam capable of passing through the wafer from the other surface side of the wafer held on the chuck table with its focusing point set to a position near the one surface of the wafer to form the deteriorated layer exposed to the one surface along the dividing line in the inside of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.