Method to obtain uniform nitrogen profile in gate dielectrics
US7435651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Sep 17, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention, in one aspect, provides a method of manufacturing a microelectronics device 100 that includes depositing a first gate dielectric layer 160 over a substrate 115, subjecting the first gate dielectric layer 160 to a first nitridation process, forming a second gate dielectric layer 165 over the substrate 115 and having a thickness less than a thickness of the first gate dielectric layer 160, and subjecting the first and second gate dielectric layers 160,165 to a second nitridation process, wherein the first and second nitridation processes are different. The present invention also provides a microelectronics device 100 fabricated in accordance with the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.