Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation process
US7435659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Feb 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for manufacturing a semiconductor device having an alignment feature. The method for manufacturing the semiconductor device, among other steps, may include implanting an n-type dopant into a substrate thereby forming an implanted region and an unimplanted region in the substrate. The method may further include oxidizing the substrate using a wet oxidation process, the wet oxidation process and n-type dopant causing a ratio of oxidation of the implanted region to the unimplanted region to be 2:1 or greater, and then removing the oxidized portions of the substrate thereby leaving an alignment feature proximate the implanted region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.