Wafer-level bonding for mechanically reinforced ultra-thin die
US7435664B2 · kind B2 · utility
7Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Jan 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention is a technique to fabricate a package. A metal sheet having trenches is formed. A thinned wafer supported by a wafer support substrate (WSS) is formed. The metal sheet is bonded to the WSS-supported thinned wafer to form a metal bonded thinned wafer. The thinned wafer is diced to the trenches into die assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.