Metal-germanium physical vapor deposition for semiconductor device defect reduction
US7435672B2 · kind B2 · utility
1Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.