Douglas E. Mercer
9Patents
4h-index
15Co-inventors
50Inventor score
Filing activity: Nov 22, 1999 → Apr 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7045431B2 | Method for integrating high-k dielectrics in transistor devices | Electricity | 37 | Expired |
| US6204198A | Rapid thermal annealing of doped polycrystalline silicon structures formed in a single-wafer cluster tool | Electricity | 12 | Expired |
| US7535066B2 | Gate structure and method | Electricity | 9 | Expired |
| US8021990B2 | Gate structure and method | Electricity | 7 | Active |
| US7208398B2 | Metal-halogen physical vapor deposition for semiconductor device defect reduction | Electricity | 4 | Expired |
| US7449385B2 | Gate dielectric and method | Electricity | 2 | Expired |
| US6773972B2 | Memory cell with transistors having relatively high threshold voltages in response to selective gate doping | Electricity | 2 | Expired |
| US7803703B2 | Metal-germanium physical vapor deposition for semiconductor device defect reduction | Electricity | 2 | Active |
| US7435672B2 | Metal-germanium physical vapor deposition for semiconductor device defect reduction | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.