Patent · US Expired

Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy

US7435690B2 · kind B2 · utility

0Cited by

3References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Hubert Moriceau · Saint-Égrève, FR
Pierre Mur · Crolles, FR

Key dates

Filing date	Mar 25, 2005
Grant date	Oct 14, 2008
Priority date	—
Expiry date	Mar 21, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02236
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.