Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7435927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.