Visible/near infrared image sensor array
US7436038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2004 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Feb 23, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal pla…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.