Gallium nitride-based semiconductor device
US7436045B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Mar 3, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.