Half bridge adaptive dead time circuit and method
US7436160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Mar 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high voltage offset detection circuit registers the voltage at the midpoint of a switching half-bridge and may determine when the midpoint voltage reaches a given value to avoid hard-switching in the half-bridge switches. The midpoint voltage of the switching half-bridge is applied through a buffer to a MOSFET that is current limited to produce a voltage that reflects the voltage of the midpoint of the switching half-bridge. The voltage produced by the MOSFET may be supplied to a comparator with a threshold input to obtain a signal that indicates when the switches of the switching half-bridge may be turned on to avoid hard-switching. An adaptive dead-time circuit and method may comprise the above sensing circuit, a first circuit for generating a first signal indicative of a high to low transition of the midpoint voltage; and an output circuit for generating an adaptive dead-time output signal based thereon. A second circuit may generate a second signal indicative of a low to high transition of the voltage; wherein the output circuit generates the adaptive dead-time output signal based on both the first and second signals. The second circuit preferably generates the second signal …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.