Non-volatile memory device, and control method of non-volatile memory device
US7436715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Apr 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory cell array, aside from a normal-data storing region, a control-information storing region is also allocated, and the control-information storing region is composed of a predetermined number of control-information storing memory cells in each bit of control information, and same bit data is stored in the predetermined number of control-information storing memory cells, and the data is read out simultaneously at the time of reading out. When being read-out the control information, since data is read out simultaneously from the predetermined number of memory cells, the driving capacity of reading route when reading out is reinforced. Reading time of control information being read out at the time of turning on the power or initializing after resetting can be shortened, and the operation can be quickly transferred to normal access action.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.