Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
US7438762B2 · kind B2 · utility
3Cited by
1References
8Claims
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Key dates
| Filing date | Aug 24, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Sep 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.