Method of making a MEMS device containing a cavity with isotropic etch followed by anisotropic etch
US7439093B2 · kind B2 · utility
9Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 16, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Nov 29, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0353
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.