Semiconductor device and manufacturing method thereof
US7439111B2 · kind B2 · utility
9Cited by
26References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Nov 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer after application, in an atmosphere including an inert gas as its main component and having an oxygen concentration of 5% or less and a water concentration of 1% or less. Preferably, an oxygen concentration is 1% or less and a water concentration is 0.1% or less. The resin containing a siloxane polymer includes a methyl group and a phenyl group. Further, the inert gas is nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.