Method of creating deep trench capacitor using a P+ metal electrode
US7439128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Jan 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0383
Abstract
The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a dielectric layer within the trench; and then depositing a P-type metal atop the dielectric layer, where the dielectric layer is positioned between the P-type metal and the buried plate. Another aspect of the present invention provides a trench capacitor where said trench capacitor comprises a trench formed in a substrate, a buried plate formed in the substrate about the trench; a node dielectric; and a P-type metal liner deposited within the trench, where the P-type metal liner is separated from the buried plate by the node dielectric. A P-type metal is defined as a metal having a work function close to the Si valence band, approximately equal to 5.1 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.