Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via
US7439173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Oct 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dummy via having a first, lower end electrically connected to the conductive line and a second upper end electrically unconnected (isolated) to any conductive line. Each dummy via extends vertically upwardly from the conductive line and removes a portion of a fast diffusion path, i.e., metal to dielectric cap interface, which is replaced with a metal to metallic liner interface. As a result, each dummy via reduces metal diffusion rates and thus increases electromigration lifetimes and allows increased current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.