Method of fabricating a capacitor
US7439197B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Nov 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.