Tungsten plug drain extension
US7439583B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Jan 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone of a first conductivity type is formed in the voltage sustaining layer opposite the semiconductor substrate. The highly doped active zone has a central aperture and a channel region that is generally centrally located within the central aperture. A terminal region of the second conductivity type is disposed in the voltage sustaining layer proximate the highly doped active zone. The terminal region has a central aperture with an opening dimension generally greater than an opening dimension of the central aperture of the highly doped zone. An extension region is disposed in the voltage sustaining region within the central aperture of the highly doped active zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.