Transistors for semiconductor device and methods of fabricating the same
US7439596B2 · kind B2 · utility
4Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/018
Abstract
The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.