Patent · US Active

Semiconductor memory device

US7440303B2 · kind B2 · utility

4Cited by

4References

20Claims

0Family size

Assignee

Qimonda AG · DE

Inventor

Corvin Liaw · Birkenfeld, DE

Key dates

Filing date	Mar 14, 2007
Grant date	Oct 21, 2008
Priority date	—
Expiry date	Mar 14, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor memory device includes resistance memory elements that are coupled to selection transistors addressed by word lines and bit lines. The memory elements are read by read/write lines arranged parallel to the word lines. Two successive memory elements along a read/write line are coupled to selection transistors that are coupled to different word lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.