Corvin Liaw
19Patents
7h-index
13Co-inventors
52Inventor score
Filing activity: Nov 17, 2003 → Jul 16, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7215568B2 | Resistive memory arrangement | Physics | 60 | Expired |
| US7869253B2 | Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell | Physics | 34 | Active |
| US7706201B2 | Integrated circuit with Resistivity changing memory cells and methods of operating the same | Physics | 13 | Active |
| US7254052B2 | Memory circuit and method for reading out a memory datum from such a memory circuit | Physics | 11 | Expired |
| US7561460B2 | Resistive memory arrangement | Physics | 10 | Active |
| US7250651B2 | Semiconductor memory device comprising memory cells with floating gate electrode and method of production | Electricity | 9 | Expired |
| US7049651B2 | Charge-trapping memory device including high permittivity strips | Electricity | 8 | Expired |
| US8531863B2 | Method for operating an integrated circuit having a resistivity changing memory cell | Physics | 7 | Active |
| US7280392B2 | Integrated memory device and method for operating the same | Physics | 7 | Expired |
| US7342819B2 | Methods for generating a reference voltage and for reading a memory cell and circuit configurations implementing the methods | Physics | 6 | Expired |
| US7428163B2 | Method and memory circuit for operating a resistive memory cell | Physics | 6 | Active |
| US7599209B2 | Memory circuit including a resistive memory element and method for operating such a memory circuit | Physics | 4 | Expired |
| US7440303B2 | Semiconductor memory device | Physics | 4 | Active |
| US7272040B2 | Multi-bit virtual-ground NAND memory device | Electricity | 4 | Expired |
| US7518902B2 | Resistive memory device and method for writing to a resistive memory cell in a resistive memory device | Physics | 3 | Expired |
| US7447053B2 | Memory device and method for operating such a memory device | Physics | 2 | Active |
| US7402490B2 | Charge-trapping memory device and methods for operating and manufacturing the cell | Electricity | 2 | Expired |
| US7277312B2 | Integrated semiconductor memory with an arrangement of nonvolatile memory cells, and method | Physics | 1 | Expired |
| US7522444B2 | Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.