Phase-change random access memory device and method of operating the same
US7440308B2 · kind B2 · utility
78Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Nov 23, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.