Method for time-evolving rectilinear contours representing photo masks
US7441227B2 · kind B2 · utility
35Cited by
30References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 16, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Oct 16, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.