Method for producing silicon single crystals and silicon single crystal produced thereby
US7442251B2 · kind B2 · utility
3Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Apr 19, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.