Photoresist composition and method of forming a photoresist pattern using the same
US7442489B2 · kind B2 · utility
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6References
16Claims
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Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jul 25, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/118
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.