Patent · US Expired

Resistively switching memory

US7442605B2 · kind B2 · utility

1Cited by

5References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Klaus-Dieter Ufert · Unterschleißheim, DE
Cay-Uwe Pinnow · Birkenfeld, DE

Key dates

Filing date	Apr 25, 2005
Grant date	Oct 28, 2008
Priority date	—
Expiry date	May 9, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/882
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.